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            石墨烯納米帶和二維材料在新型器件中的應用

            主題:石墨烯納米帶和二維材料在新型器件中的應用

            開始時間:2014-09-01 09:00:00

            結束時間:2014-09-03 17:00:00

            地點:

            論壇簡介:

            1D graphene nanoribbons have tunable electronic bandgaps, thereby enabling graphene electronic/optoelectronic applications. We have demonstrated both bottom-up and top-down methods for fabricating graphene nanoribbons. First, we present surface-assisted bottom-up fabrication of atomically precise armchair graphene nanoribbons (AGNRs) with predefined widths, namely 7-, 14- and 21-AGNRs, on Ag(111) as well as their spatially resolved width-dependent electronic structures [1]. Second, we demonstrate the top-down fabrication of an intramolecular junction by the controllable unzipping of single-walled carbon nanotubes, combining a graphene nanoribbon and single-walled carbon nanotube in a 1D nanostructure [2]. This junction shows strong gate-dependent rectifying behavior, and we demonstrate the use of the junction in prototype directionally dependent field-effect transistors, logic gates and high performance photodetectors.



            2D transition metal dichalcogenides (TMDs, e.g. MX2, M = Mo, W; X = S, Se, Te) are promising alternatives to graphene, as they can have a direct bandgap enabling electronic and optical applications. We use high resolution STM/STS to study the atomic structure and intrinsic electronic properties of MoS2 layers (mono-, bi-, tri-) directly deposited on HOPG substrates by CVD [3]. We also investigate highly crystalline and large-area tungsten diselenide (WSe2) monolayers on sapphire grown by CVD [4]. The monolayer films display strong photoluminescence, opening up potential applications in optoelectronics. We fabricate monolayer WSe2 transistors with ON/OFF current ratio of up to 109, and mobility larger than 7.3cm2/Vs. 



            [1] H. Huang, D.C. Wei, J.T. Sun, S.L. Wong, Y.P. Feng, A.H. Castro Neto, A.T.S. Wee, Scientific Reports 2, 983 (2012).

            [2] D.C. Wei, L.F. Xie, K.K. Lee, Z.B. Hu, S.H. Tan, W. Chen, C.H. Sow, K.Q. Chen, Y.Q. Liu, A.T.S. Wee, Nature Communications 4, 1374 (2013).

            [3] Y.L. Huang et al., submitted.

            [4] W.J. Zhang et al., submitted.


            日程安排

            關于主辦方

            聯系我們
            400-110-3655   

            E-mail: meeting@c-gia.cn   meeting01@c-gia.cn

            參展電話:13646399362(蘇老師)

            主講申請:19991951101(王老師)

            官方微信訂閱號
            Copyright ? 中國國際石墨烯創新大會 版權所有     運營機構:北京現代華清材料科技發展中心
            grapchina.org 京ICP備10026874號-12   grapchina.cn 京ICP備10026874號-23
            京公網安備 11010802023402號
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                      凱發

                      凱發

                      石墨烯納米帶和二維材料在新型器件中的應用

                      主題:石墨烯納米帶和二維材料在新型器件中的應用

                      開始時間:2014-09-01 09:00:00

                      結束時間:2014-09-03 17:00:00

                      地點:

                      論壇簡介:

                      1D graphene nanoribbons have tunable electronic bandgaps, thereby enabling graphene electronic/optoelectronic applications. We have demonstrated both bottom-up and top-down methods for fabricating graphene nanoribbons. First, we present surface-assisted bottom-up fabrication of atomically precise armchair graphene nanoribbons (AGNRs) with predefined widths, namely 7-, 14- and 21-AGNRs, on Ag(111) as well as their spatially resolved width-dependent electronic structures [1]. Second, we demonstrate the top-down fabrication of an intramolecular junction by the controllable unzipping of single-walled carbon nanotubes, combining a graphene nanoribbon and single-walled carbon nanotube in a 1D nanostructure [2]. This junction shows strong gate-dependent rectifying behavior, and we demonstrate the use of the junction in prototype directionally dependent field-effect transistors, logic gates and high performance photodetectors.



                      2D transition metal dichalcogenides (TMDs, e.g. MX2, M = Mo, W; X = S, Se, Te) are promising alternatives to graphene, as they can have a direct bandgap enabling electronic and optical applications. We use high resolution STM/STS to study the atomic structure and intrinsic electronic properties of MoS2 layers (mono-, bi-, tri-) directly deposited on HOPG substrates by CVD [3]. We also investigate highly crystalline and large-area tungsten diselenide (WSe2) monolayers on sapphire grown by CVD [4]. The monolayer films display strong photoluminescence, opening up potential applications in optoelectronics. We fabricate monolayer WSe2 transistors with ON/OFF current ratio of up to 109, and mobility larger than 7.3cm2/Vs. 



                      [1] H. Huang, D.C. Wei, J.T. Sun, S.L. Wong, Y.P. Feng, A.H. Castro Neto, A.T.S. Wee, Scientific Reports 2, 983 (2012).

                      [2] D.C. Wei, L.F. Xie, K.K. Lee, Z.B. Hu, S.H. Tan, W. Chen, C.H. Sow, K.Q. Chen, Y.Q. Liu, A.T.S. Wee, Nature Communications 4, 1374 (2013).

                      [3] Y.L. Huang et al., submitted.

                      [4] W.J. Zhang et al., submitted.


                      日程安排

                      關于主辦方

                      聯系我們
                      400-110-3655   

                      E-mail: meeting@c-gia.cn   meeting01@c-gia.cn

                      參展電話:13646399362(蘇老師)

                      主講申請:19991951101(王老師)

                      官方微信訂閱號
                      Copyright ? 中國國際石墨烯創新大會 版權所有     運營機構:北京現代華清材料科技發展中心
                      grapchina.org 京ICP備10026874號-12   grapchina.cn 京ICP備10026874號-23
                      京公網安備 11010802023402號
                      分享到: